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IXFR55N50

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Part No	IXFR55N50
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPerFET-TM Power MOSFETs ISOPLUS247-TM \| MOSFET N-CH 500V 48A ISOPLUS247
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	48A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	90mOhm at 27.5A, 10V
Gate Source Voltage(th) (Maximum) at Id	4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	330nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	9400pF at 25V
Power Dissipation (Maximum)	400W
Temperature Range - Operating	-40°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	ISOPLUS247
Manufacturer Package	ISOPLUS247
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191134-IXFR55N50
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IXFR55N50 CAD Model

Description

The IXYS IXFR55N50 is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products. It has a maximum drain-source breakdown voltage of 500V and a continuous drain current of 48A. This device has a maximum power dissipation of 400W and is packaged in an ISOPLUS247 package. It has a medium popularity and is currently facing a balanced supply and demand status. The manufacturer pack quantity is 30 and the MSL level is 1 (Unlimited).

Manufacturer: IXYS
Channel Type: N-channel
Maximum Drain-Source Breakdown Voltage: 500V
Continuous Drain Current: 48A
Maximum Power Dissipation: 400W
Package: ISOPLUS247
Popularity: medium
Supply and Demand Status: balanced
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)

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