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IXFN110N60P3

Name: IXFN110N60P3
Brand: IXYS
SKU: 608421
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXFN110N60P3
Manufacturer	IXYS
Catalog	FETs - Single
Description	Polar3 HiPerFET Power MOSFET \| MOSFET N-CH 600V 90A SOT227
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	600V
Id - Continuous Drain Current	90A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	56mOhm at 55A, 10V
Gate Source Voltage(th) (Maximum) at Id	5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	245nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	18000pF at 25V
Power Dissipation (Maximum)	1500W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Chassis Mount
Supplier Device Package	SOT-227B
Manufacturer Package	SOT-227-4, miniBLOC
Manufacturer Pack Quantity	10
MSL Level	1 (Unlimited)
Win Source Part Number	1191109-IXFN110N60P3
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFN110N60P3 CAD Model

Description

The IXYS IXFN110N60P3 MOSFET is a N-Channel transistor with a maximum drain-source breakdown voltage of 600V and continuous drain current of 90A.

Manufacturer: IXYS
Part Number: IXFN110N60P3
Type: MOSFET, N-Channel Transistor
Maximum Drain-Source Breakdown Voltage: 600V
Continuous Drain Current: 90A
Maximum Gate-Source Voltage: ±30V
Input Capacitance: 18000pF @ 25V
Gate Charge: 245nC @ 10V
Maximum Power Dissipation: 1500W
Package: SOT-227-4, miniBLOC
Mounting: Chassis

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$50.1263	$50.1263
3+	$41.1293	$123.3879
4+	$39.8440	$159.3760
6+	$38.5587	$231.3522
7+	$37.2734	$260.9138
9+	$33.4176	$300.7584

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

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