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Same model may have multiple batches, images only for reference.
IXFH60N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXFH60N65X2

Part No IXFH60N65X2
Manufacturer IXYS
Catalog FETs - Single
Description X2-Class HiPerFETTM | MOSFET N-CH 650V 60A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 60A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 52mOhm at 30A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 107nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 6180pF at 25V
Power Dissipation (Maximum) 780W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191069-IXFH60N65X2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFH60N65X2 CAD Model

Description

The IXFH60N65X2 is a medium popularity electronic component manufactured by IXYS and supplied by Win Source.

  • Technology: This MOSFET technology product
  • Transistor Polarity: N-channel transistor polarity
  • Mounting: is mounted through a hole.
  • Maximum Power Dissipation: It has a maximum power dissipation of 780W
  • Operating Temperature: operates in a temperature range of -55°C to 150°C.
  • Category: This product is categorized under discrete semiconductor products and has an ECCN of EAR99.
  • Package Quantity: It comes in a quantity of 30 per package
  • Vds - Drain-Source Breakdown Voltage: 650V.

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Quantity Unit Price Ext. Price
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16+ $6.5984 $105.5744
24+ $6.3755 $153.0120
34+ $5.9297 $201.6098
44+ $5.7068 $251.0992
55+ $5.4838 $301.6090
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