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Same model may have multiple batches, images only for reference.
IXDN602SI Real Image
Same model may have multiple batches, images only for reference.

IXDN602SI

Part No IXDN602SI
Manufacturer IXYS
Catalog PMIC - Gate Drivers
Description 2-Ampere Dual Low-Side Ultrafast MOSFET Drivers | MOSFET N-CH 2A DUAL LO SIDE 8-SO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer IXYS
Packaging Tube
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel, P-Channel MOSFET
Supply Voltage (V) 4.5V ~ 35V
Logic Voltage - VIL, VIH 0.8V, 3V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
Rise / Fall Time 7.5ns, 6.5ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC Exposed Pad
Supplier Device Package 8-SOIC-EP
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1191023-IXDN602SI
Manufacturer Homepage www.clare.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXDN602SI CAD Model

Description

IXDN602SI is a dual low-side gate driver IC from IXYS, designed for use in IGBT, N-Channel, and P-Channel MOSFET gate driving applications. It features two independent channels with a peak output current of 2A each.

  • Channels: Two independent channels
  • Peak Output Current: 2A each
  • Input: Inverting or non-inverting
  • Driven Configuration: Low-side
  • Logic Voltage Range: 0.8V to 3V
  • Rise Time: 7.5ns
  • Fall Time: 6.5ns
  • Package Type: 8-SOIC with an exposed pad
  • Mounting: SMD
  • Operating Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Balanced
  • Pack Quantity: 100

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.2906 $50.3248
20+ $5.1616 $103.2320
30+ $5.0003 $150.0090
42+ $4.8390 $203.2380
54+ $4.6777 $252.5958
72+ $4.1938 $301.9536
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Availability: 33,458 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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