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Same model may have multiple batches, images only for reference.
IXDF602SIA Real Image
Same model may have multiple batches, images only for reference.

IXDF602SIA

Part No IXDF602SIA
Manufacturer IXYS
Catalog PMIC - Gate Drivers
Description MOSFET N-CH 2A DUAL LO SIDE 8-SO
Datasheet
IXDF602SIA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel, P-Channel MOSFET
Supply Voltage - Operating 4.5 V to 35 V
Logic Voltage - VIL, VIH 0.8V, 3V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Inverting, Non-Inverting
Rise and Fall Time 7.5ns, 6.5ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1049284-IXDF602SIA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXDF602SIA CAD Model

Description

IXDF602SIA is a dual low-side gate driver IC from IXYS, designed for use in IGBT, N-Channel, and P-Channel MOSFET gate driving applications.

  • Channels: two independent channels
  • Peak Output Current: 2A each
  • Input: inverting or non-inverting
  • Driven Configuration: low-side
  • Logic Voltage Range: 0.8V to 3V
  • Rise Time: 7.5ns
  • Fall Time: 6.5ns
  • Package Type: 8-SOIC
  • Mountable: SMD
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ €1.4030 €49.1060
80+ €1.1512 €92.0947
125+ €1.1152 €139.4041
170+ €1.0793 €183.4778
220+ €1.0433 €229.5325
295+ €0.9354 €275.9380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,688 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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