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IXA37IF1200HJ

Part No IXA37IF1200HJ
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 58A 195W TO247 / IGBT PT 1200 V 58 A 195 W Through Hole ISOPLUS247™
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer IXYS
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 58 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Power - Max 195 W
Switching Energy 3.8mJ (on), 4.1mJ (off)
Input Type Standard
Gate Charge 106 nC
Test Condition 600V, 35A, 27Ohm, 15V
Reverse Recovery Time (trr) 350 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package ISOPLUS247™
Base Product Number IXA37IF1200
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324005-IXA37IF1200HJ
Ultra Librarian 3D Model Ultra Librarian IXA37IF1200HJ CAD Model

Description

The IXYS IXA37IF1200HJ is a single IGBT transistor that is designed to handle a maximum power of 195 W.

  • Maximum Power: 195 W
  • Voltage Collector Emitter Breakdown: 1200 V
  • Current Collector: 58 A
  • IGBT Type: PT
  • Reverse Recovery Time: 350 ns
  • Switching Energy (on): 3.8mJ
  • Switching Energy (off): 4.1mJ
  • Gate Charge: 106 nC
  • Mounting: Through Hole
  • Package: TO-247-3
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • ROHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.0945 $56.3780
9+ $11.5648 $104.0832
14+ $11.2034 $156.8476
19+ $10.8420 $205.9980
24+ $10.4806 $251.5344
32+ $9.3964 $300.6848
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Availability: 121 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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