The 2SA1366-T112-1E is a PNP silicon epitaxial transistor manufactured by ISAHAYA Electronics. It is designed for use in a wide range of audio amplification and switching applications. This transistor offers good linearity, high gain, and low distortion, making it suitable for high-performance audio equipment.

Applications

• Audio Amplifiers
• Switching Circuits
• Driver Stages
• Output Stages
• General Purpose Amplification
• Consumer Electronics

Features

• High gain (hFE): Provides excellent amplification capabilities.
• Low distortion: Ensures high-fidelity audio reproduction.
• High collector current (IC): Allows for driving high-power loads.
• Low saturation voltage (VCE(sat)): Minimizes power dissipation.
• Pb-free lead plating: Complies with environmental regulations.
• Compact package: Enables miniaturization of electronic devices.

Benefits

• Improved audio quality: Delivers clear and accurate sound reproduction.
• Efficient switching: Provides fast and reliable switching performance.
• Versatile application: Suitable for a wide range of electronic circuits.
• Low power consumption: Minimizes energy waste and extends battery life.
• Environmentally friendly: Reduces the use of hazardous materials.
• Easy assembly: Simplifies manufacturing processes and reduces assembly time.

Additional Details

The 2SA1366-T112-1E transistor features a collector-emitter voltage (VCEO) rating of -50V. The collector current (IC) rating is -150mA. The power dissipation (PD) is 400mW. The current gain (hFE) is typically between 85 and 170. The operating temperature range is typically from -55°C to +150°C. It is typically packaged in a TO-92 package, which is a small, through-hole package. It is designed for low to medium power applications requiring good linearity and low distortion.