The Intel TE28F008B3B90 is an 8-Mbit (1M x 8) Flash memory device fabricated using Intel's advanced ETOX (EPROM Tunnel Oxide) flash technology. It is a high-performance, cost-effective solution for non-volatile storage applications. This memory device offers fast read access times and is designed for reliable data storage in a variety of embedded systems.

Applications

• Embedded systems firmware storage
• Industrial control systems
• Networking equipment
• Telecommunications devices
• Automotive electronics

Features

• 8-Mbit (1M x 8) Flash Memory
• Fast Read Access Times: 90 ns
• Single 5V ± 10% Power Supply
• Industry-Standard JEDEC Flash Pinout
• Erase Suspend Capability
• Program Suspend Capability
• High Endurance: 100,000 Erase/Program Cycles
• CMOS Low Power Consumption
• Extended Temperature Range
• Data Integrity Features

Benefits

• Reliable Data Storage: Provides secure and persistent storage for critical system data.
• Fast Performance: Enables quick boot-up and efficient execution of embedded applications.
• Cost-Effective: Offers a balance of performance and price for budget-conscious designs.
• Easy Integration: Adheres to industry-standard pinouts, simplifying integration into existing systems.
• Low Power Consumption: Minimizes energy usage in battery-powered or energy-sensitive applications.
• High Endurance: Ensures long-term reliability even with frequent erase/program cycles.

Technical Specifications

The TE28F008B3B90 operates from a single 5V power supply. It features a typical read access time of 90 ns. The device supports both erase and program suspend operations, allowing the system to interrupt these operations to perform other tasks. The memory array is organized as 1,048,576 x 8 bits. It comes in a 32-lead PLCC or TSOP package.