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Same model may have multiple batches, images only for reference.
SPW11N80C3FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPW11N80C3FKSA1

Part No SPW11N80C3FKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 800V 11A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 7.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.9V at 680μA
Gate Charge (Qg) (Maximum) at Vgs 85nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1600pF at 100V
Power Dissipation (Maximum) 156W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 240
MSL Level 1 (Unlimited)
Win Source Part Number 720531-SPW11N80C3FKSA1
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPW11N80C3FKSA1 CAD Model

Description

The MOSFET is in the PG-TO247-3 case/package.

  • Case/Package: TO-247-3
  • Vds - Drain-Source Breakdown Voltage: 800V
  • Id - Continuous Drain Current: 11A
  • Rds On (Maximum) @ Id, Vgs: 450mOhm @ 7.1A, 10V
  • Vgs(th) (Maximum) @ Id: 3.9V @ 680μA
  • Qg (Maximum) @ Vgs: 85nC @ 10V
  • Vgs (Maximum): ±20V
  • Ciss (Maximum) @ Vds: 1600pF @ 100V
  • Power Dissipation: 156W
  • Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
50+ $1.1079 $55.3950
110+ $0.9091 $100.0010
175+ $0.8807 $154.1225
235+ $0.8523 $200.2905
305+ $0.8239 $251.2895
410+ $0.7387 $302.8670
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Availability: 150 pieces
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