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Same model may have multiple batches, images only for reference.
SKW15N60 Real Image
Same model may have multiple batches, images only for reference.

SKW15N60

Part No SKW15N60
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 31A I(C), 600V V(BR)CES, N
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 31 A
Current - Collector Pulsed (Icm) 62 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
Power - Max 139 W
Switching Energy 300µJ (on), 270µJ (off)
Input Type Standard
Gate Charge 76 nC
Td (on/off) @ 25°C 32ns/234ns
Test Condition 400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr) 279 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-21
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 667786-SKW15N60
Ultra Librarian 3D Model Ultra Librarian SKW15N60 CAD Model

Description

The SKW15N60 is a single IGBT transistor designed for use in discrete semiconductor applications.

  • Product: SKW15N60
  • Type: Single IGBT transistor, NPT (Non-Punch Through)
  • Application: Discrete semiconductor
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 31A
  • Maximum Power: 139W
  • Vce(on): 2.4V @ 15V and 15A
  • Reverse Recovery Time: 279ns
  • Gate Charge: 76nC
  • Temperature Range: -55°C to 150°C
  • Mounting Type: Through-hole
  • Packaging: Bulk
  • Standard Package: 1 piece

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