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Same model may have multiple batches, images only for reference.
SKW07N120 Real Image
Same model may have multiple batches, images only for reference.

SKW07N120

Part No SKW07N120
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 16.5A, 1200V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 16.5 A
Current - Collector Pulsed (Icm) 27 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 8A
Power - Max 125 W
Switching Energy 1mJ
Input Type Standard
Gate Charge 70 nC
Td (on/off) @ 25°C 27ns/440ns
Test Condition 800V, 8A, 47Ohm, 15V
Reverse Recovery Time (trr) 60 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-1
Base Product Number SKW07N
Standard Package 79 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667785-SKW07N120
Ultra Librarian 3D Model Ultra Librarian SKW07N120 CAD Model

Description

The SKW07N120 is a single IGBT transistor designed for high power applications.

  • Power Rating (Max): 125W
  • Voltage Range: 4.5V to 5.5V
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Current (Max): 16.5A
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Infineon Technologies

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