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Same model may have multiple batches, images only for reference.
SGP30N60HSXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SGP30N60HSXKSA1

Part No SGP30N60HSXKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 41A 250W TO220-3
Datasheet
SGP30N60HSXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 41A
Pulsed Collector Current 112A
Collector-emitter saturation voltage(Max) 3.15V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 1.15mJ
Input Type Standard
Gate Charge 141nC
Turn-on and Turn-off delay time 20ns/250ns
Testing Conditions 400V, 30A, 11 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Win Source Part Number 1095618-SGP30N60HSXKSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 500
Ultra Librarian 3D Model Ultra Librarian SGP30N60HSXKSA1 CAD Model

Description

The Infineon Technologies 1095618-SGP30N60HSXKSA1 is a high-performance insulated gate bipolar transistor designed for use in a variety of applications.

  • Voltage Rating: 600V
  • Current Rating: 41A
  • Power Levels: Up to 250W
  • Package: Through-hole PG-TO220-3
  • Operating Temperature Range: -55°C to 150°C
  • Status: Obsolete
  • Popularity: Medium
  • Supply and Demand: Balance
  • Package Quantity: 500 units

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135+ $2.2286 $300.8610
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