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Same model may have multiple batches, images only for reference.
IRLMS6702TR Real Image
Same model may have multiple batches, images only for reference.

IRLMS6702TR

Part No IRLMS6702TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Generation V Technology | MOSFET P-CH 20V 2.4A 6-TSOP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Tape (CT)
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 2.4A
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Maximum) at Id, Vgs 200mOhm at 1.6A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 700mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.8nC at 4.5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 210pF at 15V
Power Dissipation (Maximum) 1.7W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package Micro6(SOT23-6)
Manufacturer Package SOT-23-6
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1188600-IRLMS6702TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLMS6702TR CAD Model

Description

The Infineon Technologies IRLMS6702TR is a P-channel MOSFET with a drain-source breakdown voltage of 20V and continuous drain current of 2.4A.

  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.4A
  • Package: Micro6(SOT23-6)
  • Power Dissipation (Maximum): 1.7W
  • Maximum Gate-Source Voltage: ±12V
  • Gate-Source Voltage(th) (Maximum) @ Id: 700mV @ 250μA
  • Maximum Input Capacitance (Ciss) (Maximum) @ Vds: 210pF @ 15V
  • Supply and Demand Status: balance
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 1188600-IRLMS6702TR

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