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IRLI530N

Part No IRLI530N
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 12A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 25V
Power Dissipation (Maximum) 41W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188549-IRLI530N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLI530N CAD Model

Description

The IRLI530N is a MOSFET transistor from Infineon Technologies with an N-channel polarity and a maximum drain-source breakdown voltage of 100V.

  • Mounting: Through-hole
  • Package: TO-220AB Full-Pak
  • Continuous Drain Current: 12A
  • Maximum Rds On: 100mOhm @ 9A and 10V
  • Gate-Source Voltage (th): 2V @ 250μA
  • Gate Charge (Qg): 34nC @ 5V
  • Input Capacitance (Ciss): 800pF @ 25V
  • Power Dissipation: 41W
  • Operating Temperatures: -55°C to 175°C
  • Product Status: Obsolete
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.4705 $57.3525
11+ $9.4117 $103.5287
17+ $9.1176 $154.9992
23+ $8.8235 $202.9405
30+ $8.5294 $255.8820
40+ $7.6470 $305.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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