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Same model may have multiple batches, images only for reference.
IRGS6B60KDTRLP Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGS6B60KDTRLP

Part No IRGS6B60KDTRLP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 13A 90W D2PAK
Datasheet
IRGS6B60KDTRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 13A
Pulsed Collector Current 26A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 5A
Maximum Power Dissipation 90W
Total Switching Energy(Ets) 110μJ (on), 135μJ (off)
Input Type Standard
Gate Charge 18.2nC
Turn-on and Turn-off delay time 25ns/215ns
Testing Conditions 400V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1047382-IRGS6B60KDTRLP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGS6B60KDTRLP CAD Model

Description

The Infineon Technologies IRGS6B60KDTRLP is a high-performance IGBT with a reverse recovery time of 70ns.

  • Reverse Recovery Time: 70ns
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Maximum Collector Current: 13A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 90W
  • Total Switching Energy (on): 110μJ
  • Total Switching Energy (off): 135μJ
  • Turn-On Delay Time: 25ns
  • Turn-Off Delay Time: 215ns
  • Package: D2PAK
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V and 5A

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