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IRGS10B60KDTRLP

Name: IRGS10B60KDTRLP
Brand: Infineon Technologies
SKU: 161318
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRGS10B60KDTRLP
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 600V 22A 156W D2PAK
Datasheet	IRGS10B60KDTRLP Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Not For New Designs
IGBT Type	NPT
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	22A
Pulsed Collector Current	44A
Collector-emitter saturation voltage(Max)	2.2V @ 15V, 10A
Maximum Power Dissipation	156W
Total Switching Energy(Ets)	140μJ (on), 250μJ (off)
Input Type	Standard
Gate Charge	38nC
Turn-on and Turn-off delay time	30ns/230ns
Testing Conditions	400V, 10A, 47 Ohm, 15V
Reverse Recovery Time (trr)	90ns
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	D2PAK
Win Source Part Number	121015-IRGS10B60KDTRLP
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRGS10B60KDTRLP CAD Model

Description

The IRGS10B60KDTRLP is an NPT IGBT transistor from Infineon Technologies with a maximum current collector of 22A and a VCEO maximum collector-emitter breakdown voltage of 600V.

Maximum Current Collector: 22A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Collector-Emitter Saturation Voltage: 2.2V @ 15V and 10A
Gate Charge: 38nC
Mounting Type: SMD (SMT)
Package: D2PAK

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
12+	$4.9293	$59.1516
29+	$4.0446	$117.2934
45+	$3.9182	$176.3190
61+	$3.7919	$231.3059
79+	$3.6654	$289.5666
106+	$3.2862	$348.3372

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,590 pieces

MOQ: 12 pcs

Order Increment : 1 pcs

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