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IRGS10B60KDPBF

Part No IRGS10B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 22A 156W D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 10A
Maximum Power 156W
Switching Energy 140μJ (on), 250μJ (off)
Input Type Standard
Gate Charge 38nC
Td (on/off) at 25°C 30ns/230ns
Test Condition 400V, 10A, 47Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Family Part Number IRGS10B60KDPBF
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 738816-IRGS10B60KDPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGS10B60KDPBF CAD Model

Description

The IRGS10B60KDPBF is a rugged and efficient insulated gate bipolar transistor (IGBT) from Infineon Technologies, designed for high-voltage, high-current switching applications. This IGBT combines the advantages of MOSFETs and bipolar transistors, offering fast switching speeds, high voltage blocking capability, and low on-state voltage drop. Its robust design and comprehensive protection features make it suitable for demanding applications in industrial and automotive environments.

Applications

  • Motor drives
  • Induction heating
  • Welding machines
  • Uninterruptible power supplies (UPS)
  • Renewable energy converters (solar inverters, wind turbines)

Features

  • 600V blocking voltage
  • Low VCE(on)
  • Fast switching speed
  • Short-circuit ruggedness
  • Integrated gate resistor
  • Overcurrent protection
  • Temperature sense
  • Lead-free, RoHS compliant

Benefits

  • High Efficiency: Low VCE(on) minimizes conduction losses, resulting in high efficiency and reduced heat dissipation.
  • Fast Switching: Fast switching speed reduces switching losses and improves system performance.
  • Robust Protection: Short-circuit ruggedness and overcurrent protection safeguard the IGBT and connected equipment from damage.
  • Simplified Design: Integrated gate resistor simplifies the design and reduces the number of external components required.
  • Reliable Performance: The IGBT is designed for reliable operation in harsh industrial environments.

The IRGS10B60KDPBF is built using advanced trench field stop technology, which optimizes the trade-off between on-state voltage drop and switching speed. This results in an IGBT with high efficiency and fast switching capabilities. The integrated gate resistor simplifies the gate drive circuit and improves EMI performance. The short-circuit ruggedness and overcurrent protection provide a high level of protection against fault conditions.

The IGBT also includes a temperature sense pin, which allows for monitoring the junction temperature and implementing thermal management strategies. The device is lead-free and RoHS compliant, meeting environmental regulations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1769 $58.8450
120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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