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IRGP4063D1PBF

Part No IRGP4063D1PBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 600V 100A 330W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 192A
Vce(on) (Maximum) at Vge, Ic 2.14V at 15V, 48A
Maximum Power 330W
Switching Energy 1.4mJ (on), 1.1mJ (off)
Input Type Standard
Gate Charge 150nC
Td (on/off) at 25°C 60ns/160ns
Test Condition 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr) 80ns
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Family Part Number IRGP4063D
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188364-IRGP4063D1PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP4063D1PBF CAD Model

Description

The Infineon Technologies IRGP4063D1PBF is a through-hole IGBT transistor with a reverse recovery time of 80ns.

  • Current Collector Pulsed: 192A
  • Maximum Collector Current: 100A
  • Switching Energy: 1.4mJ (on) and 1.1mJ (off)
  • Gate Charge: 150nC
  • Package: packaged in a TO-247AC package
  • Maximum Power: 330W
  • Breakdown Voltage: 600V
  • Operating Temperature Range: -40°C to 175°C
  • Status: This device is obsolete and has a limited supply and demand status.

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7+ $8.2538 $57.7766
13+ $7.7314 $100.5082
21+ $7.4702 $156.8742
29+ $6.9478 $201.4862
38+ $6.6866 $254.0908
47+ $6.4254 $301.9938
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Availability: 10,120 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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