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IRG7PH42U-EP

Part No IRG7PH42U-EP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR | IGBT 1200V 90A 385W TO247AD
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 90A
Current - Collector Pulsed (Icm) 90A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 30A
Maximum Power 385W
Switching Energy 2.11mJ (on), 1.18mJ (off)
Input Type Standard
Gate Charge 157nC
Td (on/off) at 25°C 25ns/229ns
Test Condition 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 153ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD
Family Part Number IRG7PH42
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188329-IRG7PH42U-EP
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG7PH42U-EP CAD Model

Description

The IRG7PH42U-EP is a radiation hardened, high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, specifically designed for aerospace and high-reliability applications. This IGBT combines the ease of driving MOSFETs with the high current and voltage handling capabilities of bipolar transistors. The “EP” designation often indicates an enhanced performance or extended portfolio part, meaning it may have improved specifications or be part of a specific program.

Applications:

  • Space-based power systems
  • High-reliability motor control
  • Aerospace power distribution
  • Radiation-intensive environments
  • High-power switching regulators in defense applications

Features:

  • Radiation hardened for reliable operation in harsh environments
  • High switching speed
  • Low VCE(on) to minimize conduction losses
  • Optimized for high-frequency operation
  • Avalanche ruggedness

Benefits:

  • Reliable performance in radiation-exposed conditions, preventing device degradation and failure.
  • Improved system efficiency due to reduced switching and conduction losses.
  • Smaller and lighter system designs enabled by high-frequency operation.
  • Robustness against voltage transients due to avalanche capability.
  • Reduced system complexity and cost due to simplified gate drive requirements.

Additional Details:

The IRG7PH42U-EP typically has a collector-emitter voltage (VCE) rating of 600V to 1200V, depending on the specific variant, and a collector current (IC) rating suitable for high-power applications. The gate threshold voltage is compatible with standard MOSFET drivers. The package is typically a hermetically sealed package like a TO-254 or similar, optimized for space and high-reliability environments. Radiation hardening is achieved through specific design and manufacturing techniques, making it less susceptible to performance degradation from radiation exposure. It's essential to consult the manufacturer's datasheet for precise electrical characteristics, radiation tolerance levels, and application guidelines to ensure proper use in intended environments.

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