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IRG4RC20FTR

Part No IRG4RC20FTR
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 22A 66W DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 22A
Pulsed Collector Current 44A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 12A
Maximum Power Dissipation 66W
Total Switching Energy(Ets) 190μJ (on), 920μJ (off)
Input Type Standard
Gate Charge 27nC
Turn-on and Turn-off delay time 26ns/194ns
Testing Conditions 480V, 12A, 50 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 121611-IRG4RC20FTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRG4RC20FTR CAD Model

Description

The Infineon Technologies 121611-IRG4RC20FTR is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for use in a variety of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 22A
  • Maximum Power Dissipation: 66W
  • Package: D-Pak
  • Mounting Technology: SMT
  • Gate Charge: 27nC
  • Total Switching Energy (on): 190μJ
  • Total Switching Energy (off): 920μJ
  • Turn-On Delay Time: 26ns
  • Turn-Off Delay Time: 194ns

The Infineon Technologies 121611-IRG4RC20FTR is an obsolete (EOL) product, but it is still available in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,400 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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