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Same model may have multiple batches, images only for reference.
IRG4PSH71UPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PSH71UPBF

Part No IRG4PSH71UPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 99A 350W SUPER247
Datasheet
IRG4PSH71UPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 99A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 70A
Maximum Power Dissipation 350W
Total Switching Energy(Ets) 4.77mJ (on), 9.54mJ (off)
Input Type Standard
Gate Charge 370nC
Turn-on and Turn-off delay time 51ns/280ns
Testing Conditions 960V, 70A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package SUPER-247 (TO-274AA)
Win Source Part Number 1047325-IRG4PSH71UPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 25
Ultra Librarian 3D Model Ultra Librarian IRG4PSH71UPBF CAD Model

Description

The Infineon Technologies IRG4PSH71UPBF is an obsolete (EOL) IGBT transistor that has a maximum collector-emitter breakdown voltage of 1200V and a maximum collector current of 99A.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 99A
  • Gate Charge: 370nC
  • Maximum Power Dissipation: 350W
  • Mounting: Through-hole
  • Package: SUPER-247 (TO-274AA)

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