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Same model may have multiple batches, images only for reference.
IRG4PF50WD-201P Real Image
Same model may have multiple batches, images only for reference.

IRG4PF50WD-201P

Part No IRG4PF50WD-201P
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
IRG4PF50WD-201P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 900 V
Current - Collector (Ic) (Max) 51 A
Current - Collector Pulsed (Icm) 204 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Power - Max 200 W
Switching Energy 2.63mJ (on), 1.34mJ (off)
Input Type Standard
Gate Charge 160 nC
Td (on/off) @ 25°C 50ns/110ns
Test Condition 720V, 28A, 5Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Other Names SP001541540
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277476-IRG4PF50WD-201P
Ultra Librarian 3D Model Ultra Librarian IRG4PF50WD-201P CAD Model

Description

The 1277476-IRG4PF50WD-201P is an IGBT transistor with a maximum power of 200 W and a voltage collector emitter breakdown of 900 V.

  • Maximum Collector Current: 51 A
  • Switching Energy (on): 2.63 mJ
  • Switching Energy (off): 1.34 mJ
  • Package: TO-247-3
  • Gate Charge: 160 nC
  • Temperature Range: -55°C ~ 150°C (TJ)

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