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Same model may have multiple batches, images only for reference.
IRG4PC40KDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC40KDPBF

Part No IRG4PC40KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 42A 160W TO247AC
Datasheet
IRG4PC40KDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 42A
Pulsed Collector Current 84A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 25A
Maximum Power Dissipation 160W
Total Switching Energy(Ets) 950μJ (on), 760μJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 53ns/110ns
Testing Conditions 480V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 069643-IRG4PC40KDPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4PC40KDPBF CAD Model

Description

The Infineon Technologies IRG4PC40KDPBF is a through-hole IGBT transistor with a maximum current collector of 42A and a VCEO maximum collector-emitter breakdown voltage of 600V.

  • Maximum Power Dissipation: 160W
  • Gate Charge: 120nC
  • Total Switching Energy (Ets): 950μJ (on), 760μJ (off)
  • Turn-On and Turn-Off Delay Time: 53ns/110ns
  • Case/Package: TO-247AC

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