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Same model may have multiple batches, images only for reference.
IRG4PC30FD Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG4PC30FD

Part No IRG4PC30FD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 31A 100W TO247AC
Datasheet
IRG4PC30FD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 31A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 17A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 630μJ (on), 1.39mJ (off)
Input Type Standard
Gate Charge 51nC
Turn-on and Turn-off delay time 42ns/230ns
Testing Conditions 480V, 17A, 23 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 040772-IRG4PC30FD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PC30FD CAD Model

Description

The Infineon Technologies IGBT is a single transistor that is designed for use in discrete semiconductor products such as power supplies and motor control circuits.

  • Package: TO-247AC case
  • Maximum Current Collector: 31A
  • VCEO maximum collector-emitter breakdown voltage: 600V
  • Gate Charge: 51nC
  • Reverse Recovery Time: 42ns
  • Supply and Demand Status: limited.

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