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IRG4BC30FDPBF

Part No IRG4BC30FDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 31A I(C), 600V V(BR)CES, N
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 31 A
Current - Collector Pulsed (Icm) 124 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Power - Max 100 W
Switching Energy 630µJ (on), 1.39mJ (off)
Input Type Standard
Gate Charge 51 nC
Td (on/off) @ 25°C 42ns/230ns
Test Condition 480V, 17A, 23Ohm, 15V
Reverse Recovery Time (trr) 42 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 1185077-IRG4BC30FDPBF
Ultra Librarian 3D Model Ultra Librarian IRG4BC30FDPBF CAD Model

Description

The 1185077-IRG4BC30FDPBF is a single IGBT transistor designed for high power applications.

  • Power Rating: 100 W
  • Collector Current: 31 A
  • Collector-Emitter Breakdown Voltage: 600 V
  • Reverse Recovery Time: 42 ns
  • Temperature Range: -55°C to 150°C
  • Mounting: Through Hole
  • Package: TO-220-3
  • Gate Charge: 51 nC
  • Switching Energy (On): 630µJ
  • Switching Energy (Off): 1.39mJ
  • Series: IRG4BC30FDPBF
  • Manufacturer: Infineon Technologies
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,100 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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