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Same model may have multiple batches, images only for reference.
IRG4BC30FD-SPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC30FD-SPBF

Part No IRG4BC30FD-SPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 31A 100W D2PAK
Datasheet
IRG4BC30FD-SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 31A
Pulsed Collector Current 124A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 17A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 630μJ (on), 1.39mJ (off)
Input Type Standard
Gate Charge 51nC
Turn-on and Turn-off delay time 42ns/230ns
Testing Conditions 480V, 17A, 23 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 110112-IRG4BC30FD-SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC30FD-SPBF CAD Model

Description

The Infineon Technologies IRG4BC30FD-SPBF IGBT is a high-performance device designed for use in a wide range of applications, including discrete semiconductor products.

  • Application: Discrete Semiconductor Products
  • Package: D2PAK
  • Mounting: SMD (SMT)
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 100W
  • Pulsed Collector Current: 124A
  • Collector-Emitter Saturation Voltage: 1.8V @ 15V, 17A
  • Total Switching Energy (on): 630μJ
  • Total Switching Energy (off): 1.39mJ
  • Turn-On Delay Time: 42ns
  • Turn-Off Delay Time: 230ns
  • Standard Compliance: Halogen-Free
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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