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Same model may have multiple batches, images only for reference.
IRG4BC20UD-S Real Image
Same model may have multiple batches, images only for reference.

IRG4BC20UD-S

Part No IRG4BC20UD-S
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) | IGBT 600V 13A 60W D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 13A
Current - Collector Pulsed (Icm) 52A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 6.5A
Maximum Power 60W
Switching Energy 160μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 27nC
Td (on/off) at 25°C 39ns/93ns
Test Condition 480V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188231-IRG4BC20UD-S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC20UD-S CAD Model

Description

The Infineon Technologies 1188231-IRG4BC20UD-S is a high-performance IGBT transistor that is designed for use in a variety of applications.

  • Voltage Rating: 600V
  • Current Rating: 13A
  • On-State Voltage Drop: 2.1V @ 15V and 6.5A

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