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Same model may have multiple batches, images only for reference.
IRG4BC20MD-SPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC20MD-SPBF

Part No IRG4BC20MD-SPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 18A 60W D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 18A
Current - Collector Pulsed (Icm) 36A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 11A
Maximum Power 60W
Switching Energy 410μJ (on), 2.03mJ (off)
Input Type Standard
Gate Charge 39nC
Td (on/off) at 25°C 21ns/463ns
Test Condition 480V, 11A, 50Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188225-IRG4BC20MD-SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC20MD-SPBF CAD Model

Description

The Infineon Technologies IGBT, with part number 1188225-IRG4BC20MD-SPBF, is a high-performance semiconductor device used in electronic circuits.

  • Package: D2PAK
  • Leads: 2
  • Collector Current (Ic): 18A
  • Collector-Emitter Voltage (Vce): 600V
  • Reverse Recovery Time (trr): 37ns
  • Gate Charge: 39nC
  • Switching Energy (on): 410μJ
  • Switching Energy (off): 2.03mJ
  • Maximum Power Rating: 60W
  • Temperature Range: -55°C to 150°C

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