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IRFSL3607PBF

Part No IRFSL3607PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 75V 80A TO-262
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Part Status Last Time Buy
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 9mOhm at 46A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 84nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3070pF at 50V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188047-IRFSL3607PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFSL3607PBF CAD Model

Description

The Infineon Technologies 1188047-IRFSL3607PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 75V and a continuous drain current of 80A.

  • Drain-source breakdown voltage: 75V
  • Continuous drain current: 80A
  • Maximum power dissipation: 140W
  • Gate-source voltage: ±20V
  • Mounting style: through-hole
  • Supplier device package: TO-262-3 long leads, I2Pak, TO-262AA
  • Drive voltage (max Rds On, min Rds On): 10V
  • Input capacitance (Ciss) (maximum) @ Vds: 3070pF @ 50V
  • Ideal for: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4079 $63.3555
100+ $1.1550 $115.5000
155+ $1.1192 $173.4760
215+ $1.0834 $232.9310
280+ $1.0476 $293.3280
370+ $0.9390 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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