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Same model may have multiple batches, images only for reference.
IRFSL3207 Real Image
Same model may have multiple batches, images only for reference.

IRFSL3207

Part No IRFSL3207
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 75V 180A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 180A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.5mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 260nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7600pF at 50V
Power Dissipation (Maximum) 330W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188045-IRFSL3207
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL3207 CAD Model

Description

The Infineon Technologies 1188045-IRFSL3207 is a MOSFET electronic component that has a N-Channel transistor polarity.

  • Vds - Drain-Source Breakdown Voltage: 75V
  • Id - Continuous Drain Current: 180A
  • Rds On (Maximum) @ Id, Vgs: 4.5mOhm @ 75A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V
  • Gate source voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Input capacitance (Ciss) (Maximum) @ Vds: 7600pF @ 50V
  • The supply and demand status of this product is balanced.
  • The manufacturer of this product is Infineon Technologies and it is available @ Win Source Part Number.

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94+ $3.6881 $346.6814
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