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Same model may have multiple batches, images only for reference.
IRFF9120 Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFF9120

Part No IRFF9120
Manufacturer Infineon Technologies
Catalog HOT - SALES and EOL Components (H - K)
Description 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Manufacturer Infineon Technologies
Drain Current (Max) 4 A
Frequency (Max) Not Required MHz
Gate-Source Voltage (Max) ±20(V)
Output Power (Max) Not Required W
Power Dissipation 20(W)
Mounting Through Hole
Noise Figure Not Required dB
Drain-Source On-Res 0.69(ohm)
Operating Temp Range -55C to 150C
Package Type TO-39
Packaging Bulk
Pin Count 3
Polarity P
Type Power MOSFET
Number of Elements 1
Operating Temperature Classification Military
Channel Mode Enhancement
Drain Efficiency Not Required %
Drain-Source On-Volt 100(V)
Power Gain Not Required dB
Rad Hardened No
Continuous Drain Current 4(A)
DELETED Not Compliant
Win Source Part Number 040713-IRFF9120
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFF9120 CAD Model

Description

The Infineon Technologies 040713-IRFF9120 is a power MOSFET with a P polarity and an operating temperature range of -55C to 150C.

  • Manufacturer: Infineon Technologies
  • Polarity: P
  • Operating Temperature Range: -55C to 150C
  • Mounting Style: through-hole
  • Package Type: TO-39
  • Drain-Source On-Volt: 100V
  • Drain-Source On-Res: 0.69 ohm
  • Continuous Drain Current: 4A
  • Gate-Source Voltage: +/-20V
  • Channel Mode: enhancement channel mode
  • Power Dissipation: 20W
  • Rad Hardened: not rad hardened
  • Compliance: not compliant with DELETED
  • Supply and Demand Status: limited

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