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Same model may have multiple batches, images only for reference.
IRFBA90N20DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBA90N20DPBF

Part No IRFBA90N20DPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET®Power MOSFET | MOSFET N-CH 200V 98A SUPER-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 98A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 23mOhm at 59A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 240nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 6080pF at 25V
Power Dissipation (Maximum) 650W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package SUPER-220 (TO-273AA)
Manufacturer Package Super-220-3 (Straight Leads)
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187521-IRFBA90N20DPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBA90N20DPBF CAD Model

Description

The Infineon Technologies IRFBA90N20DPBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 200V and a continuous drain current of 98A.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 98A
  • Maximum Rds On: 23mOhm @ 59A and 10V
  • Gate Source Voltage (th): 5V @ 250μA
  • Gate Charge (Qg): 240nC @ 10V
  • Gate Source Voltage: -30V to +30V
  • Input Capacitance (Ciss): 6080pF @ 25V
  • Package: SUPER-220 (TO-273AA)
  • Supply and Demand Status: Limited
  • Operating Temperature Range: -55°C to 175°C

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