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Same model may have multiple batches, images only for reference.
IRFB3307 Real Image
Same model may have multiple batches, images only for reference.

IRFB3307

Part No IRFB3307
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 75V 130A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 130A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.3mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5150pF at 50V
Power Dissipation (Maximum) 250W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187496-IRFB3307
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB3307 CAD Model

Description

The Infineon IRFB3307 is a high-performance N-Channel MOSFET that is designed for use in a variety of applications.

  • Drain-Source Voltage: 75V
  • Continuous Drain Current: 130A
  • Package: TO-220-3
  • Maximum Power Dissipation: 250W
  • On-Resistance: 6.3mOhm @ 75A and 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 5150pF @ 50V
  • Manufacturer: Infineon

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60+ $0.9049 $54.2940
135+ $0.7425 $100.2375
210+ $0.7193 $151.0530
290+ $0.6961 $201.8690
375+ $0.6729 $252.3375
500+ $0.6033 $301.6500
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