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Same model may have multiple batches, images only for reference.
IRF7480MTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7480MTRPBF

Part No IRF7480MTRPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Synchronous rectifier applications | MOSFET N-CH 40V 217A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 217A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 1.2mOhm at 132A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.9V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 185nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6680pF at 25V
Power Dissipation (Maximum) 96W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package DirectFET Isometric ME
Manufacturer Package DirectFET Isometric ME
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 731452-IRF7480MTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7480MTRPBF CAD Model

Description

The MOSFET is a high-performance component designed for use in discrete semiconductor products manufactured by Infineon Technologies.

  • Vds - Drain-Source Breakdown Voltage: 40V
  • Id - Continuous Drain Current: 217A
  • Rds On (Maximum) @ Id, Vgs: 1.2mOhm @ 132A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 185nC @ 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 3.9V @ 150μA
  • Input Capacitance (Ciss) (Maximum) @ Vds: 6680pF @ 25V
  • Temperature Range: -55°C to 150°C
  • Power Dissipation (Maximum): 96W
  • Drive Voltage (max Rds On, Min Rds On): 6V, 10V
  • Supply and Demand Status: Sufficient

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