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Same model may have multiple batches, images only for reference.
IRF7406PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7406PBF

Part No IRF7406PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET®Power MOSFET | MOSFET P-CH 30V 5.8A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 5.8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 45mOhm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 59nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1100pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187254-IRF7406PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7406PBF CAD Model

Description

The Infineon Technologies IRF7406PBF with the Win Source Part Number 1187254 is a P-Channel MOSFET with a maximum drain-source breakdown voltage of 30V and a continuous drain current of 5.8A.

  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 1100pF @ 25V
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 3,800
  • MSL Level: 1 (unlimited)
  • Technology: MOSFET
  • Package: 8-SOIC
  • Power Dissipation: 2.5W
  • Category: Discrete Semiconductor Products

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