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Same model may have multiple batches, images only for reference.
IRF540ZS Real Image
Same model may have multiple batches, images only for reference.

IRF540ZS

Part No IRF540ZS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 100V 36A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 36A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 26.5mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 63nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1770pF at 25V
Power Dissipation (Maximum) 92W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187061-IRF540ZS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF540ZS CAD Model

Description

The Infineon Technologies IRF540ZS is a N-Channel MOSFET that has a drain-source breakdown voltage (Vds) of 100V and a continuous drain current (Id) of 36A.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage (Vds): 100V
  • Continuous Drain Current (Id): 36A
  • Maximum On-Resistance (Rds On): 26.5mOhm @ 22A and 10V
  • Gate Charge (Qg): 63nC @ 10V
  • Input Capacitance (Ciss): 1770pF @ 25V
  • Application: discrete semiconductor products
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.7943 $87.5886
3+ $35.9338 $107.8014
5+ $34.8108 $174.0540
6+ $33.6879 $202.1274
8+ $32.5650 $260.5200
11+ $29.1962 $321.1582
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