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Same model may have multiple batches, images only for reference.
IRF1324SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1324SPBF

Part No IRF1324SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 24V 195A D2-PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 24V
Id - Continuous Drain Current 195A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.65mOhm at 195A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 240nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7590pF at 24V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186891-IRF1324SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1324SPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-Channel transistor designed for use in Discrete Semiconductor Products.

  • Vds - Drain-Source Breakdown Voltage: 24V
  • Id - Continuous Drain Current: 195A
  • Rds On (Maximum) @ Id, Vgs: 1.65mOhm @ 195A, 10V
  • Package: Tube
  • Power Dissipation (Maximum): 300W
  • Mounting Style: SMD
  • Gate Charge (Qg) (Maximum) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 7590pF @ 24V
  • Gate Source Voltage (Maximum): ±20V
  • Supply and Demand Status: Limited

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