The IR2175S is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon Technologies. It features a floating channel designed for bootstrap operation, making it suitable for driving high-side N-channel MOSFETs or IGBTs in various power conversion applications.
Applications:
- Half-Bridge and Full-Bridge Converters
- Motor Drives
- Induction Heating
- Power Supplies
- Lighting Ballasts
Features:
- High-Side Gate Driver
- Floating Channel for Bootstrap Operation
- High-Voltage Capability
- High-Speed Operation
- CMOS Schmitt-Triggered Inputs with Pull-Down
- Under-Voltage Lockout (UVLO)
- SO-8 Package
- Lead-Free
- RoHS Compliant
Benefits:
- Simplified High-Side Drive: Eliminates the need for complex high-side gate drive circuitry.
- Improved Efficiency: Enables efficient driving of MOSFETs or IGBTs in high-frequency applications.
- Robust Protection: UVLO protection prevents damage to the driven device during low-voltage conditions.
- Fast Switching: High-speed operation reduces switching losses.
- Easy to Use: CMOS Schmitt-triggered inputs provide noise immunity and simplified interfacing.
Specifications:
The IR2175S features a high-side floating channel voltage of up to 600V. It offers a typical gate drive supply range of 10V to 20V. The logic input is CMOS compatible with Schmitt trigger inputs, ensuring reliable operation in noisy environments. The Under-Voltage Lockout (UVLO) function protects the power switch from operating at insufficient gate drive voltage. It is packaged in a standard SO-8 package.
When using the IR2175S, proper PCB layout and decoupling techniques are critical for minimizing noise and ensuring reliable operation. Consult the datasheet for detailed specifications, application notes, and layout recommendations.