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IPD30N10S3L34ATMA2

Part No IPD30N10S3L34ATMA2
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET_(75V 120V(
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1976 pF @ 25 V
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Ultra Librarian 3D Model Ultra Librarian IPD30N10S3L34ATMA2 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7075 $53.0625
155+ $0.6627 $102.7185
235+ $0.6403 $150.4705
340+ $0.5956 $202.5040
440+ $0.5732 $252.2080
545+ $0.5508 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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