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IPB04N03LA

Part No IPB04N03LA
Manufacturer Infineon Technologies
Catalog FETs - Single
Description OptiMOS 2 Power-Transistor | MOSFET N-CH 25V 80A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Tape (CT)
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 25V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 3.9mOhm at 55A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 60μA
Gate Charge (Qg) (Maximum) at Vgs 32nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3877pF at 15V
Power Dissipation (Maximum) 107W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package PG-TO263-3-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1186014-IPB04N03LA
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB04N03LA CAD Model

Description

The Infineon Technologies electronic component is a MOSFET technology-based product and is a part of the Discrete Semiconductor Products category.

  • Win Source Part Number: 1186014-IPB04N03LA
  • Manufacturer Homepage: www.infineon.com
  • Maximum Power Dissipation: 107W
  • Maximum Vds - Drain-Source Breakdown Voltage: 25V
  • Supply and Demand Status: balanced
  • Popularity: moderate
  • Packaging: cut tape (CT)
  • Mounting Style: SMD

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2034 $54.1530
105+ $0.9875 $103.6875
160+ $0.9566 $153.0560
220+ $0.9257 $203.6540
280+ $0.8949 $250.5720
375+ $0.8023 $300.8625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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