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Same model may have multiple batches, images only for reference.
IMZ120R060M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMZ120R060M1HXKSA1

Part No IMZ120R060M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 36A TO247-4
Datasheet
IMZ120R060M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202572-IMZ120R060M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Package
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IMZ120R060M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202572 is a high-performance N-channel SiCFET (Silicon Carbide) transistor.

  • Drain-to-Source Voltage (Vdss): 1200V
  • Maximum Power Dissipation: 150W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package Type: Package
  • Product Status: Active

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27+ $3.7511 $101.2797
42+ $3.6339 $152.6238
57+ $3.5166 $200.4462
74+ $3.3994 $251.5556
99+ $3.0478 $301.7322
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Availability: 9,600 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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