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Same model may have multiple batches, images only for reference.
IMW65R030M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW65R030M1HXKSA1

Part No IMW65R030M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Datasheet
IMW65R030M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202571-IMW65R030M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 42mOhm @ 29.5A, 18V
Vgs(th) (Max) @ Id 5.7V @ 8.8mA
Ultra Librarian 3D Model Ultra Librarian IMW65R030M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202571 is a high-performance N-Channel MOSFET from the CoolSiC™ series.

  • Series: CoolSiC™
  • Technology: SiCFET (Silicon Carbide)
  • Drain-to-Source Voltage (Vdss): 650V
  • Maximum On-Resistance (Rds On): 42mOhm @ 29.5A and 18V gate-source voltage (Vgs)
  • Package: Tube
  • Status: Active
  • Maximum Gate Threshold Voltage (Vgs(th)): 5.7V @ 8.8mA

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6+ $19.6516 $117.9096
8+ $18.9877 $151.9016
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15+ $16.9959 $254.9385
19+ $16.3320 $310.3080
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Availability: 2,350 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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