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IMBG65R083M1HXTMA1

Part No IMBG65R083M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202794-IMBG65R083M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IMBG65R083M1HXTMA1 CAD Model

Description

The Infineon Technologies 1202794 is a high-performance N-Channel MOSFET from the CoolSIC™ M1 series.

  • Channel Type: N-Channel
  • Series: CoolSIC™ M1
  • Technology: SiCFET (Silicon Carbide)
  • Drain-to-Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 28A @ 25°C
  • Package: Tape & Reel (TR) Cut Tape (CT)
  • Status: Active
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.4107 $51.2856
20+ $5.2601 $105.2020
30+ $5.0957 $152.8710
41+ $4.9314 $202.1874
53+ $4.7670 $252.6510
71+ $4.2738 $303.4398
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 320 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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