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Same model may have multiple batches, images only for reference.
IKW50N65H5FKSA1 Real Image
Same model may have multiple batches, images only for reference.

IKW50N65H5FKSA1

Part No IKW50N65H5FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 80A 305W PG-TO247-3
Datasheet
IKW50N65H5FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 80A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 50A
Maximum Power Dissipation 305W
Total Switching Energy(Ets) 520μJ (on), 180μJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 21ns/180ns
Testing Conditions 400V, 25A, 12 Ohm, 15V
Reverse Recovery Time (trr) 57ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045289-IKW50N65H5FKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKW50N65H5FKSA1 CAD Model

Description

The Infineon Technologies IGBT, part number IKW50N65H5FKSA1, is a high-performance component designed to provide reliable operation in a variety of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 650V
  • Maximum Current Collector: 80A
  • Package: PG-TO247-3
  • Status: Active
  • Demand: Medium
  • Maximum Rds On at Id,Vgs: 3.5 mOhm @ 50A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2463 $51.6649
48+ $2.1014 $100.8672
74+ $2.0290 $150.1460
107+ $1.8840 $201.5880
138+ $1.8116 $250.0008
173+ $1.7391 $300.8643
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