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IKW50N65ET7XKSA1

Part No IKW50N65ET7XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IKW50N65ET7XKSA1 / IGBT Trench Field Stop 650 V 50 A 273 W Through Hole PG-TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, TrenchStop™
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 50A
Power - Max 273 W
Switching Energy 1.2mJ (on) , 850µJ (off)
Input Type Standard
Gate Charge 290 nC
Td (on/off) @ 25°C 26ns/350ns
Test Condition 400V, 50A, 9Ohm, 15V
Reverse Recovery Time (trr) 93 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IKW50N65
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1341316-IKW50N65ET7XKSA1
Ultra Librarian 3D Model Ultra Librarian IKW50N65ET7XKSA1 CAD Model

Description

The IKW50N65ET7XKSA1 is a single IGBT transistor from Infineon Technologies. It belongs to the Automotive, AEC-Q101, TrenchStop™ series and is designed for discrete semiconductor products.

  • Voltage Collector-Emitter Breakdown: 650V
  • Current Collector Pulsed: 150A
  • Power: 273W
  • Switching Energy (on): 1.2mJ
  • Switching Energy (off): 850µJ
  • Package: TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Gate Charge: 290 nC
  • Temperature Range: -40°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8926 $58.7112
29+ $4.0145 $116.4205
45+ $3.8890 $175.0050
62+ $3.7636 $233.3432
80+ $3.6382 $291.0560
107+ $3.2617 $349.0019
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Availability: 2,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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