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Same model may have multiple batches, images only for reference.
IKW25T120 Real Image
Same model may have multiple batches, images only for reference.

IKW25T120

Part No IKW25T120
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3
Datasheet
IKW25T120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 75A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 25A
Maximum Power Dissipation 190W
Total Switching Energy(Ets) 4.2mJ
Input Type Standard
Gate Charge 155nC
Turn-on and Turn-off delay time 50ns/560ns
Testing Conditions 600V, 25A, 22 Ohm, 15V
Reverse Recovery Time (trr) 200ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 068792-IKW25T120
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IKW25T120
Introduction Date July 02, 2002
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IKW25T120 CAD Model

Description

The Infineon Technologies IKW25T120 IGBT with a collector-emitter breakdown voltage of 1200V is a NPT, Trench Field Stop electronic component that is widely used in various applications.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Type: NPT, Trench Field Stop
  • Maximum Collector Current: 50A
  • Maximum Power Dissipation: 190W
  • Package: PG-TO247-3
  • Gate Charge: 155nC
  • Turn-On and Turn-Off Delay Time: 50ns/560ns
  • Category: Discrete Semiconductor Products

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