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IKW25N120H3

Part No IKW25N120H3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 50A 326W TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 25A
Maximum Power Dissipation 326W
Total Switching Energy(Ets) 2.65mJ
Input Type Standard
Gate Charge 115nC
Turn-on and Turn-off delay time 27ns/277ns
Testing Conditions 600V, 25A, 23 Ohm, 15V
Reverse Recovery Time (trr) 290ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 088024-IKW25N120H3
Family Name IKW25N120H3
Introduction Date January 31, 2006
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKW25N120H3 CAD Model

Description

The Infineon Technologies IKW25N120H3 is a Trench Field Stop IGBT with a maximum collector-emitter breakdown voltage of 1200V and a maximum current collector of 50A.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 50A
  • Reverse Recovery Time: 290ns
  • Gate Charge: 115nC
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V and 25A
  • Package: PG-TO247-3
  • Maximum Power Dissipation: 326W
  • Halogen-Free Compliant: Yes
  • Manufactured in: China and the Philippines

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Pricing & Ordering

Quantity Unit Price Ext. Price
28+ $1.8395 $51.5060
59+ $1.7230 $101.6570
91+ $1.6648 $151.4968
130+ $1.5484 $201.2920
168+ $1.4902 $250.3536
210+ $1.4320 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 28 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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