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IKB10N60T Real Image IKB10N60T real image4678
Same model may have multiple batches, images only for reference.
IKB10N60T Real Image IKB10N60T real image4678
IKB10N60T Real Image IKB10N60T real image4678
Same model may have multiple batches, images only for reference.

IKB10N60T

Part No IKB10N60T
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 20A 110W TO263-3
Datasheet
IKB10N60T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.05V @ 15V, 10A
Maximum Power Dissipation 110W
Total Switching Energy(Ets) 430μJ
Input Type Standard
Gate Charge 62nC
Turn-on and Turn-off delay time 12ns/215ns
Testing Conditions 400V, 10A, 23 Ohm, 15V
Reverse Recovery Time (trr) 115ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO-263
Win Source Part Number 040614-IKB10N60T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKB10N60T CAD Model

Description

The Infineon Technologies IKB10N60T is an NPT, trench field stop IGBT type that is mounted on SMD (SMT).

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 110W
  • Maximum Current Collector: 20A
  • Pulsed Collector Current: 30A
  • Collector-Emitter Saturation Voltage (Max): 2.05V @ 15V, 10A
  • Total Switching Energy (Ets): 430μJ
  • Turn-on and Turn-off Delay Time: 12ns/215ns
  • Testing Conditions: 400V, 10A, 23 Ohm, 15V
  • Gate Charge: 62nC
  • Package: PG-TO-263
  • Operating Temperature Range: between -40°C to 175°C (TJ)
  • Popularity: medium popularity
  • Supply and Demand Status: limited

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