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IKB03N120H2

Part No IKB03N120H2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 9.6A 62.5W TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 9.6A
Pulsed Collector Current 9.9A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 3A
Maximum Power Dissipation 62.5W
Total Switching Energy(Ets) 290μJ
Input Type Standard
Gate Charge 22nC
Turn-on and Turn-off delay time 9.2ns/281ns
Testing Conditions 800V, 3A, 82 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Win Source Part Number 068785-IKB03N120H2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKB03N120H2 CAD Model

Description

The IKB03N120H2 is an integrated circuit manufactured by Infineon Technologies.

  • Category: Discrete Semiconductor Products
  • Popularity: medium
  • IGBT Type: NPT, Trench Field Stop
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 62.5W
  • Total Switching Energy: 290μJ
  • Status: not for new designs
  • Supply and Demand Status: balance
  • Package: PG-TO263-3-2
  • Testing Conditions: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time: 42ns
  • Gate Charge: 22nC

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.5940 $52.7820
7+ $14.4361 $101.0527
11+ $13.9850 $153.8350
15+ $13.5339 $203.0085
20+ $13.0828 $261.6560
26+ $11.7294 $304.9644
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 974 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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