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IHW20N120R3

Part No IHW20N120R3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 40A 310W TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 40A
Pulsed Collector Current 60A
Collector-emitter saturation voltage(Max) 1.7V @ 15V, 20A
Maximum Power Dissipation 310W
Total Switching Energy(Ets) 950μJ (off)
Input Type Standard
Gate Charge 211nC
Turn-on and Turn-off delay time -/387ns
Testing Conditions 600V, 20A, 15 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 068779-IHW20N120R3
Family Name IHW20N120R3
Introduction Date April 01, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IHW20N120R3 CAD Model

Description

The Infineon Technologies IHW20N120R3 is a high power IGBT transistor designed for applications such as motor control and power supplies.

  • Maximum Collector Current: 40A
  • Collector-Emitter Breakdown Voltage: 1200V
  • Package: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5974 $63.8960
90+ $1.3109 $117.9810
140+ $1.2693 $177.7020
190+ $1.2289 $233.4910
245+ $1.1873 $290.8885
330+ $1.0649 $351.4170
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,540 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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